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 ZXTP25140BFH 140V, SOT23, PNP medium power transistor
Summary
BV(BR)CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m PD = 1.25W typical Vce(sat) < -260mV @ 1A ;
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * High power dissipation SOT23 package 180V forward blocking voltage Low saturation voltage
E
Applications
* * DC-DC converters High side switching
Ordering information
Device ZXTP25140BFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000
Pinout - top view
Device marking
026
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25140BFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at TA=25C (a) Linear derating factor Power dissipation at TA=25C (b) Linear derating factor Power dissipation at TA=25C (c) Linear derating factor Power dissipation at TA=25C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit -180 -180 -140 -7 -7 -1 -3 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C
PD
PD
PD
Tj, Tstg
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25140BFH
Characteristics
Issue 1 - March 2006
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ZXTP25140BFH
Electrical characteristics (at TAMB = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Collector emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEX, Min. -180 -180 Typ. -205 -205 Max. Unit V V Conditions IC = -100 A IC = -100 A, RBE 1k or -0.25V < VBE < 1V IC = -10mA (*) IE = -100uA (*) IE = -100 A VCB = -144V VCB = -144V, TAMB= 100C VCE = -144V; RBE 1k or -0.25V < VBE < 1V VEB = -5.6V IC = -0.1A, IB = -10mA (*) IC = -0.1A, IB = -2mA (*) IC = -0.5A, IB = -50mA (*) IC = -0.5A, IB = -25mA (*) IC = -1A, IB = -100mA (*) IC = -1A, IB = -100mA (*) IC = -1A, VCE = -2V (*) IC = -10mA, VCE = -2V (*) IC = -0.1A, VCE = -2V (*) IC = -1A, VCE = -2V (*) MHz pF ns ns
2%.
BVCEO
-140
-160
V
BVECO
-7
-8.5
V
BVEBO ICBO ICEX
-7
-8.2 <-1 -50 -20 -100
V nA A nA
IEBO Vce(sat)
<-1 -40 -110 -90 -170 -180
-50 -50 -135 -110 -230 -260 -950 -900 300
nA mV mV mV mV mV mV mV
Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio
Vbe(sat) VBE(ON) hFE 100 100 20
-850 -800 200 190 30 75 10 102 854
Transition frequency Output capacitance Turn-on time Turn-off time
fT COBO t(on) t(off)
IC = -10mA, VCE = -20V f = 20MHz VCB = -20V, f = 1MHz (*) VCC = -20V. IC = -100mA, IB1 = IB2= -10mA
NOTES: (*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25140BFH
Typical characteristics
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
5
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ZXTP25140BFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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